Confinement-Induced Mobility Increase in p-type [110] and [111] Silicon Nanowires
نویسندگان
چکیده
1. Abstract The spds-spin-orbit-coupled (SO) atomistic tightbinding (TB) model is coupled to Boltzmann transport formalism for calculation of the low-field mobility in Si nanowires (NWs). We show that the phonon limited mobility of p-type NWs in the [110] and [111] transport orientations largely increases by more than 7X as the diameter is scaled from D=12nm down to D=3nm. This effect is attributed to dispersion modifications due to confinement that largely improve the carrier velocities and reduce scattering rates in these type of NWs.
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